Product Description
Specification
| Access Time | 150ns |
| Mounting Type | Through Hole |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Write Cycle Time Word Page | 150ns |
| Voltage Supply | 4.5 V ~ 5.5 V |
| Supplier Device Package | 28-EDIP |
| Part Status | Active |
| Packaging | Tube |
| Package Case | 28-DIP Module (0.600",15.24mm) |
| Operating Temperature | 0 deg C ~ 70 deg C (TA) |
| Memory Type | Non-Volatile |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Memory Format | NVSRAM |
| Base Part Number | DS1230Y |
Reliable Memory Storage for Industrial SystemsThe DS1230Y-100 NV SRAM is specifically tailored for critical memory storage in industrial automation and embedded computing. Its robust data retention capabilities and unlimited write cycles make it suitable for applications where reliability is paramount. The integrated lithium cell, combined with advanced controller circuitry, ensures secure, nonvolatile storage without the need for external power sources.
Drop-In Replacement and Easy IntegrationThanks to its 32-pin DIP (through-hole) package and parallel interface, the DS1230Y-100 can seamlessly replace standard SRAM modules in existing designs. This compatibility simplifies integration, making upgrades and system maintenance straightforward, while maintaining compliance with stringent industry standards, including RoHS.
FAQs of DS1230Y-100:
Q: How is the DS1230Y-100 used in embedded systems?
A: The DS1230Y-100 serves as a nonvolatile memory solution in embedded systems, retaining data for at least 10 years without requiring an external power source. Its parallel interface allows quick integration where SRAM functionality and long-term data preservation are critical.
Q: What benefits does the DS1230Y-100 offer over traditional SRAM devices?
A: Unlike standard SRAM, the DS1230Y-100 retains data even during power loss, eliminating the need for backup batteries or periodic data refresh. Its integrated lithium cell and unlimited write cycle endurance ensure reliable, maintenance-free operation.
Q: When should I choose the DS1230Y-100 for my application?
A: Choose the DS1230Y-100 when you need fast, nonvolatile memory with a minimum 10-year data retention for industrial automation, computing, or embedded systems, especially where data persistence and reliability are essential.
Q: Where can the DS1230Y-100 be installed?
A: The DS1230Y-100 is designed for through-hole installation in standard 32-pin DIP sockets, making it ideal for both new designs and as a drop-in replacement in legacy systems across industrial and computing environments.
Q: What is the process for integrating the DS1230Y-100 into a system?
A: Integration involves placing the DS1230Y-100 into a compatible 32-pin DIP socket and connecting it to the address and data bus. No additional circuitry or external batteries are needed, thanks to its internal lithium cell.
Q: How does the DS1230Y-100 achieve data retention without an external battery?
A: The DS1230Y-100 contains an integrated lithium cell and control circuitry, which automatically preserves SRAM contents when external power is disconnected, allowing for at least 10 years of reliable data storage.
Q: What kind of systems commonly benefit from the DS1230Y-100?
A: Industrial control systems, embedded automation platforms, and data logging devices benefit from the DS1230Y-100 due to its nonvolatile operation, rapid access times, and long-term reliability without external maintenance.